Antimonide Type-II Superlattices: From MBE Growth and Materials Physics to Device Applications

Yong-Hang Zhang

Director, Center for Photonics Innovation
School of Electrical, Computer and Energy Engineering
Arizona State University, Tempe, AZ 85287


Lecture 1: 10:00, October 16, 2026, at Engineering Building #2
2ed floor, Room E1-225
Lecture 2: 13:30, October 19, 2026, at Engineering Building #2
2ed floor, Room E1-225
Lecture 3: 10:00, November 10, at Engineering Building #2
1st floor, Room E1-101
Lecture 4: 13:30, November 11, at Engineering Building #2
2ed floor, Room E1-225

This four-part lecture series (approximately 40 minutes per lecture) traces antimonide type-II superlattices (T2SLs) from fundamental concepts and molecular beam epitaxy (MBE) growth to infrared device applications. Special attention is given to the unusually long carrier lifetimes in InAs/InAsSb superlattices and the underlying recombination physics.

Lecture 1. Fundamentals of Superlattices. Artificial periodic potentials, quantum confinement, minibands, type-II band alignment, and infrared bandgap engineering.
Lecture 2. MBE Growth and Materials Characterization. Epitaxial growth of InAs/InAsSb superlattices, strain balancing, interface formation and asymmetry, crystalline quality, and structural characterization.
Lecture 3. Device Applications. Type-II superlattice infrared lasers and photodetectors, with emphasis on nBn barrier architectures and the progression from materials research to practical devices.
Lecture 4. Origin of Long Carrier Lifetimes. The 412 ns minority-carrier lifetime observed in long-wavelength infrared (LWIR) InAs/InAsSb superlattices, pressure-dependent photoluminescence, and the roles of radiative, Auger, and defect-related recombination.